1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction…

1. Define the majority carrier concentration in an n-type Si semiconductor in terms of the conduction band edge energy Ec and the Fermi energy Ep 2 marks Find an expression for Ec – Ep, i.e, the difference between the conduction band edge energy and the Fermi energy in terms of the donor concentration Np. 4 marks Determine the concentration of donor impurity atoms that must be added to silicon that Ec Ef = 0.2 eV So 4 marks